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md7ic2755nr1 MD7IC2755GNR1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the md7ic2755n wideband integrated circuit is designed with on--chip matching that makes it usable from 2500--2700 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulations. ? typical doherty wimax performance: v dd =28volts,i dq1a =i dq1b = 80 ma, i dq2b = 275 ma, v g2a =1.7vdc,p out = 10 watts avg., f = 2700 mhz, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9. 5 db @ 0.01% probability on ccdf. power gain ? 25 db power added efficiency ? 25% device output signal par ? 8. 5 db @ 0.01% probability on ccdf acpr @ 8.5 mhz offset ? --37 dbc in 1 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 2600 mhz, 90 watts cw output power (3 db input overdrive from rated p out ) ? stable into a 10:1 vswr. all spurs below --60 dbc @ 100 mw to 10 watts cw p out ? typical p out @ 1 db compression point ? 30 watts cw features ? production tested in a symmetrical doherty configuration ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current te mperature compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. figure 1. functional block diagram figure 2. pin connections 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. 2. peaking and carrier orientation is determined by the test fixture design. note: exposed backside of the package is the source terminal for the transistors. quiescent current temperature compensation (1) v ds1a rf ina v gs1a rf out1 /v ds2a v gs2a quiescent current temperature compensation (1) v ds1b rf inb v gs1b rf out2 /v ds2b v gs2b v ds1a rf ina nc rf inb rf out1 /v ds2a 1 2 3 4 7 8 14 v gs1b 9 10 11 v gs2a v gs1a nc nc v gs2b nc v ds1b rf out2 /v ds2b 13 6 12 (top view) 5 peaking (2) carrier (2) 2500--2700 mhz, 10 w avg., 28 v wimax rf ldmos wideband integrated power amplifiers md7ic2755nr1 MD7IC2755GNR1 case 1618--02 to--270 wb--14 plastic md7ic2755nr1 case 1621--02 to--270 wb--14 gull plastic MD7IC2755GNR1 document number: md7ic2755n rev. 3, 9/2010 freescale semiconductor technical data ? freescale semiconductor, inc., 2009--2010. a ll rights reserved.
2 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 table 1. maximum ratings rating symbol value unit drain--source voltage v ds --0.5, +65 vdc gate--source voltage v gs --0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 30 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit final doherty application thermal resistance, junction to case case temperature 72 c, p out = 10 w cw, 2600 mhz stage 1a, 1b, 28 vdc, i dq1a =i dq1b =80ma stage 2a, 2b, 28 vdc, i dq2b = 275 ma, v g2a =1.7vdc case temperature 90 c, p out = 55 w cw, 2600 mhz stage 1a, 1b, 28 vdc, i dq1a =i dq1b =80ma stage 2a, 2b, 28 vdc, i dq2b = 275 ma, v g2a =1.7vdc r jc 2.6 1.8 2.3 1.1 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1c (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955.
md7ic2755nr1 MD7IC2755GNR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (1) (v ds =10vdc,i d =46 adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (1) (v ds =28vdc,i dq1a =i dq1b =80madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (2) (v dd =28vdc,i dq1a =i dq1b = 80 madc, measured in functional test) v gg(q) 12 15 18 vdc stage 2 ? off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (1) (v ds =10vdc,i d = 185 adc) v gs(th) 1.2 1.9 2.7 vdc gate quiescent voltage (1) (v ds =28vdc,i dq2b = 275 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (2) (v dd =28vdc,i dq2b = 275 madc, measured in functional test) v gg(q) 12 15 18 vdc drain--source on--voltage (1) (v gs =10vdc,i d =1a) v ds(on) 0.2 0.47 1.2 vdc stage 2 -- dynamic characteristics (2,3) output capacitance (v ds =28vdc 30 mv(rms)ac @ 1 mhz, v in =0vdc) c oss ? 111 ? pf functional tests (4,5) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dq1a =i dq1b =80ma,i dq2b = 275 ma, v g2a =1.7vdc,p out = 10 w avg., f = 2700 mhz, wimax, ofdm 802.16d, 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probability on ccdf. acpr measured in 1 mhz channel bandwidth @ 8.5 mhz offset. power gain g ps 23 25 31 db power added efficiency pae 23 25 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 8 8.5 ? db adjacent channel power ratio acpr ? -- 3 7 -- 3 5 dbc 1. side a and side b are tied together for this measurement. 2. each side of device measured separately. 3. part internally matched both on input and output. 4. measurement made with device in a sy mmetrical doherty configuration. 5. measurement made with device in str aight lead configuration before any lead forming operation is applied. (continued)
4 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dq1a =i dq1b =80ma,i dq2b = 275 ma, v g2a = 1.7 vdc, 2500--2700 mhz bandwidth p out @ 1 db compression point, cw p1db ? 30 ? w imd symmetry @ 12 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 70 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 85 ? mhz gain flatness in 200 mhz bandwidth @ p out =10wavg. g f ? 1.6 ? db average deviation from linear phase in 200 mhz bandwidth @p out =30wcw ? 2 ? average group delay @ p out = 30 w cw, f = 2600 mhz delay ? 2.7 ? ns part--to--part insertion phase variation @ p out =30wcw, f = 2600 mhz, six sigma window ? ? 3.6 ? gain variation over temperature (--30 cto+85 c) ? g ? 0.039 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.03 ? dbm/ c
md7ic2755nr1 MD7IC2755GNR1 5 rf device data freescale semiconductor figure 3. md7ic2755nr1(gnr1) test circuit schematic rf input rf output 1 2 3 4 5 8 9 14 12 11 10 dut 6 7 13 v g2b z13 0.0419 x 0.7690? microstrip z14 0.0717 x 0.6750 microstrip z in 0.0419 x 1.7230 microstrip z out 0.0419 x 1.1400 microstrip pcb rogers ro4350b, 0.020 , r =3.5 z1, z2 0.0419 x 0.480 microstrip z3, z4 0.247 x 0.1504 microstrip z5, z6 0.247 x 0.1704 microstrip z7, z8 0.030 x 0.4400 microstrip z9, z10 0.0907 x 0.075 microstrip z11, z12 0.0419 x 0.4200 microstrip r12 r11 r10 c2 c4 v g1b r9 r8 r7 z2 z1 r13 v g1a r6 r5 r4 v g2a r3 r2 r1 c1 c3 c5 c7 c8 c6 z4 z3 c9 c11 z6 z5 c10 c12 z10 z9 c21 c23 c22 c24 quiescent current temperature compensation quiescent current temperature compensation c19 c20 z12 z11 z13 z14 z out z8 c14 c16 c18 z7 c17 c15 c13 v dd v d2a v d1a l2 v d2b v d1b z in side a side b l1 coupler 1 table 6. md7ic2755nr1(gnr1) test circui t component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6, c13, c14, c19, c20 6.8 pf chip capacitors atc600s6r8bt250xt atc c7, c8, c17, c18 10 f chip capacitors grm55dr61h106ka88 murata c15, c16 1500 pf chip capacitors grm1885c2a152ja01 murata c9, c10, c11, c12, c21, c22, c23, c24 0.5 pf chip capacitors atc600s0r5bt250xt atc coupler 1 2500--2700 hybrid 3 db coupler gsc356 soshin l1, l2 jumper wires r4, r5, r7, r8 75 ? , 1/8 w chip resistors rk73b2attd750g koa speer r1, r10 300 ? , 1/8 w chip resistors rk73b2attd301g koa speer r2, r11 2k ? , 1/8 w chip resistors rk73b2attd202g koa speer r3, r6, r9, r12 12 k ? , 1/8 w chip resistors rk73b2attd123g koa speer r13 51 ? , 1/8 w chip resistor rk73b2attd510g koa speer
6 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 figure 4. md7ic2755nr1(gnr1) t est circuit component layout r1 r2 r4 r5 r3 r6 c7 l2 r13 c5 c3 c1 c2 c6 c4 r7 r8 r9 r10 r11 r12 c8 l1 c18 c16 c14 c10 c12 c20 c24 c22 c21 c23 c19 c17 c15 c13 c9 c11 v g2a v g1a v g1b v g2b coupler 1 v d1b v d2b v d2a v d1a md7ic2755n rev. 2 p c 4 2 2 4 2 2 single--ended quadrature combined doherty push--pull 4 4 4 4 figure 5. possible circuit topologies
md7ic2755nr1 MD7IC2755GNR1 7 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 2500 irl g ps acpr f, frequency (mhz) figure 6. wimax broadband performance @ p out = 10 watts avg. -- 2 2 -- 1 4 -- 1 6 -- 1 8 -- 2 0 26.8 28.8 28.6 28.4 -- 4 6 30 28 26 24 -- 3 6 -- 3 8 -- 4 0 -- 4 2 pae, power added efficiency (%) g ps , power gain (db) 28.2 28 27.6 27.4 27.2 27 2525 2550 2575 2600 2625 2650 2675 2700 22 -- 4 4 -- 2 4 parc parc (db) -- 1 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 -- 1 . 4 acpr (dbc) 27.8 figure 7. power gain versus output power ? stage 1, class ab 22 32 1 i dq1a =i dq1b = 120 ma p out , output power (watts) cw 40 ma 28 26 10 100 g ps , power gain (db) 30 v dd =28vdc i dq2b = 275 ma v g2a =1.7vdc f = 2600 mhz 24 100 ma 0.1 80 ma 60 ma figure 8. power gain versus output power ? stage 2, class ab 100 22 32 1 i dq2b = 413 ma 344 ma p out , output power (watts) cw 95 ma 275 ma 26 10 g ps , power gain (db) 28 143 ma 0.1 figure 9. power gain versus output power ? stage 2, class c 22 32 1 v g2a =1.7vdc p out , output power (watts) cw 26 10 100 g ps , power gain (db) 28 v dd =28vdc i dq1a =i dq1b =80ma i dq2b = 275 ma f = 2600 mhz 24 1.9 v 0.1 1.6 v 1.5 v v dd =28vdc i dq1a =i dq1b =80ma v g2a =1.7vdc f = 2600 mhz v g2a = 1.7 vdc, ofdm 802.16d, 64 qam 3 / 4 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0. 01% probab ility on ccdf p out =10w(avg.) 24 30 30 1.8 v i dq1a =i dq1b =80ma,i dq2b = 275 ma v dd =28vdc pae
8 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 typical characteristics figure 10. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 im3--u -- 2 0 -- 3 0 -- 5 0 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--l im5--u im5--l im7--l im7--u figure 11. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 16 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 2 23 30 10 46 34 28 22 16 pae, power added efficiency (%) acpr parc acpr (dbc) -- 4 8 -- 3 0 -- 3 3 -- 3 6 -- 4 2 -- 3 9 -- 4 5 29 g ps , power gain (db) 28.5 26.5 26 g ps 60 0 50 -- 6 0 -- 1 0 p out , output power (watts) avg. wimax t c =--30 _ c 25 _ c 85 _ c 10 1 40 35 30 25 20 -- 2 0 -- 2 5 -- 3 0 -- 3 5 -- 4 0 acpr (dbc) g ps pae, power added efficiency (%), g ps , power gain (db) -- 3 0 _ c 25 _ c 85 _ c acpr 15 10 -- 4 5 -- 5 0 figure 12. wimax, acpr, power gain and power added efficiency versus output power 1 9 40 --1 db = 5.65 w --2db=11.92w -- 1 0 0 28 27.5 27 --3 db = 18.67 w 5--55 25 _ c -- 3 0 _ c v dd =28vdc,i dq1a =i dq1b =80ma i dq2b = 275 ma, v g2a =1.7vdc v dd =28vdc,p out = 12 w (pep), i dq1a =i dq1b =80ma i dq2b = 275 ma, v g2a = 1.7 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2600 mhz v dd =28vdc,i dq1a =i dq1b =80ma i dq2b = 275 ma, v g2a = 1.7 vdc, f = 2600 mhz ofdm 802.16d, 64 qam 3 / 4 ,4bursts pae 45 -- 1 5 10 mhz channel bandwidth input signal par = 9.5 db @ 0.01% probabilit y on ccdf f = 2600 mhz, ofdm 802.16d 64 qam 3 / 4 , 4 bursts, 10 mhz channel bandwidth, input signal par = 9.5 db @ 0.01% probabilit y on ccdf pae
md7ic2755nr1 MD7IC2755GNR1 9 rf device data freescale semiconductor typical characteristics 2950 5 30 2050 -- 2 5 -- 1 0 gain f, frequency (mhz) figure 13. broadband frequency response irl -- 1 3 25 -- 1 6 20 -- 1 9 15 -- 2 2 10 2650 2550 2450 2250 2150 irl (db) gain (db) v dd =28vdc p out =19dbm i dq1a =i dq1b =80ma i dq2b = 275 ma v g2a =1.7vdc 2750 2850 2350 250 10 10 90 t j , junction temperature ( c) figure 14. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =28vdc,p out = 10 w avg., and pae = 25%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 8 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 10 6 10 9 stage 2a stage 1a stage 2b stage 1b
10 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 wimax test signal 10 0.0001 100 0 peak--to--average (db) figure 15. ofdm 802.16d test signal 10 1 0.1 0.01 0.001 24 68 probability (%) input signal ofdm 802.16d, 64 qam 3 / 4 ,4bursts 10 mhz channel bandwidth, input signal par = 9.5 db @ 0. 01% probab ility on ccdf -- 6 0 -- 1 0 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 10 mhz channel bw 20 515 10 0 -- 5 -- 1 0 -- 2 0 f, frequency (mhz) figure 16. wimax spectrum mask specifications -- 1 5 acpr in 1 mhz integrated bw acpr in 1 mhz integrated bw
z in device under test output matching network z load device under test output matching network figure 17. series equivalent input and load impedance md7ic2755nr1 MD7IC2755GNR1 11 rf device data freescale semiconductor z o =50 ? z in -- 1 b f = 2700 mhz f = 2500 mhz f = 2700 mhz f = 2500 mhz z o =10 ? z load -- 2 b side 1b ? measured data v dd =28vdc,i dq1a =i dq1b =80ma,i dq2b = 275 ma, v g2a =1.7vdc,p out =10wavg. f mhz z in ? 2500 51.13 -- j3.65 2525 53.63 + j10.52 2550 65.26 + j9.11 2575 55.46 + j8.51 2600 56.42 + j7.21 2625 64.56 + j9.19 2650 62.22 + j8.40 2675 63.11 + j15.82 2700 63.82 + j23.55 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. side 2b ? simulated data v dd =28vdc,i dq1a =i dq1b =80ma,i dq2b = 275 ma, v g2a =1.7vdc,p out =10wavg. f mhz z load ? 2500 4.48 -- j1.14 2525 4.44 -- j0.93 2550 4.40 -- j0.70 2575 4.38 -- j0.46 2600 4.36 -- j0.25 2625 4.34 -- j0.14 2650 4.32 + j0.17 2675 4.31 + j0.33 2700 4.30 + j0.57 z in = device input impedance as measured rom gate to ground. z load = test circuit impedance as measured from drain to ground.
12 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 alternative peak tune load pull characteristics ? class ab 18 50 9 p3db = 45.61 dbm (36 w) p in , input power (dbm) 48 46 44 42 39 10 12 11 14 13 17 15 actual ideal p1db = 44.75 dbm (30 w) 49 47 43 45 41 16 8 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v v dd =28vdc,i dq1b =80ma i dq2b = 275 ma, pulsed cw, 10 sec(on) 10% duty cycle, f = 2500 mhz 40 test impedances per compression level z source ? z load ? p1db 55.22 + j20.17 4.19 -- j3.44 figure 18. pulsed cw output power versus input power @ 28 v @ 2500 mhz 20 9 p3db = 45.38 dbm (34 w) p in , input power (dbm) 48 46 44 42 38 10 12 11 14 13 17 15 actual ideal p1db = 44.31 dbm (27 w) 49 47 43 45 41 16 8 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v v dd =28vdc,i dq1b =80ma i dq2b = 275 ma, pulsed cw, 10 sec(on) 10% duty cycle, f = 2700 mhz 40 39 18 19 test impedances per compression level z source ? z load ? p1db 48.60 + j5.11 2.47 -- j3.66 figure 19. pulsed cw output power versus input power @ 28 v @ 2700 mhz note: measurement made on the class ab, carrier side of the device.
md7ic2755nr1 MD7IC2755GNR1 13 rf device data freescale semiconductor table 7. class ab common source s--parameters (v dd =28v,i dq1b =80ma,i dq2b = 275 ma, t a =25 c, 50 ohm system) measurement made on the class ab, carrier side of the device. f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 1500 0.569 74.4 0.002 --64.1 0.00228 135.2 0.997 --176.0 1550 0.575 51.5 0.004 --51.1 0.00100 --30.0 0.997 --179.0 1600 0.593 34.0 0.009 --87.0 0.000590 --107.6 0.995 177.4 1650 0.618 21.8 0.032 --84.4 0.00101 --103.4 0.988 172.7 1700 0.623 14.3 0.092 --94.6 0.00168 --49.5 0.974 166.7 1750 0.601 7.6 0.209 -- 111.8 0.00326 --146.0 0.979 164.9 1800 0.540 1.5 0.452 --140.8 0.00369 --102.1 0.975 162.2 1850 0.426 -- 6 . 8 0.885 --175.9 0.00183 --37.4 0.962 159.2 1900 0.275 --12.9 1.539 151.6 0.00427 --46.1 0.954 156.7 1950 0.058 --69.7 2.773 120.2 0.00351 143.7 0.960 153.0 2000 0.154 121.2 4.188 93.2 0.00632 --82.3 0.946 150.8 2050 0.150 79.4 7.347 72.7 0.00857 --34.1 0.935 146.9 2100 0.064 64.0 9.595 43.3 0.0155 --51.9 0.960 144.0 2150 0.607 --131.3 24.560 26.9 0.0482 --102.7 1.296 110.3 2200 0.406 81.7 28.776 --77.6 0.0257 154.9 0.196 --103.8 2250 0.166 --68.2 22.037 --116.7 0.00750 131.6 0.497 --162.5 2300 0.184 --76.9 19.823 --156.5 0.00936 156.1 0.659 --164.7 2350 0.232 --154.0 16.761 --179.7 0.00172 --139.6 0.743 --173.5 2400 0.182 --94.9 16.827 153.2 0.00578 149.5 0.778 --173.7 2450 0.114 --38.6 15.801 128.7 0.00490 163.9 0.814 --173.9 2500 0.277 --52.4 19.305 89.9 0.00825 142.6 0.853 --169.7 2550 0.261 -- 3 . 1 11.891 58.7 0.00185 153.7 0.942 --173.7 2600 0.208 10.3 8.941 47.6 0.00411 166.2 0.961 --177.1 2650 0.568 28.8 8.433 40.6 0.00264 --155.7 0.977 --179.4 2700 0.797 25.0 7.430 15.9 0.00536 128.0 0.976 178.8 2750 0.358 26.5 5.138 -- 5 . 8 0.00527 168.2 0.973 177.1 2800 0.384 33.8 4.654 --18.4 0.00311 --178.0 0.976 175.3 2850 0.420 40.4 4.257 --28.4 0.000761 173.9 0.977 173.9 2900 0.337 25.5 3.973 --41.8 0.00233 --134.7 0.977 172.6 2950 0.166 27.4 3.240 --53.3 0.00414 --133.7 0.969 171.4 3000 0.194 23.2 2.641 --52.2 0.00578 --153.5 0.980 170.4 3050 0.186 -- 9 . 6 2.337 --61.6 0.00456 158.2 0.979 169.1 3100 0.241 --59.0 2.189 --74.9 0.00204 --78.5 0.982 168.5 3150 0.344 --81.9 2.394 --90.8 0.00281 --98.4 0.974 162.9 3200 0.392 --95.8 2.636 --105.7 0.00468 --122.1 0.966 154.9 3250 0.363 --95.2 3.397 --117.6 0.00661 --106.5 0.949 139.2 3300 0.312 --84.4 5.196 --146.4 0.0170 --126.5 0.819 93.6 3350 0.430 --65.7 5.347 144.0 0.0291 119.3 0.707 --65.7 (continued)
14 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 table 7. class ab common source s--parameters (v dd =28v,i dq1b =80ma,i dq2b = 275 ma, t a =25 c, 50 ohm system) measurement made on the class ab, carrier side of the device. (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 3400 0.434 --56.5 2.527 100.7 0.00568 100.1 0.930 --139.3 3450 0.499 --50.1 1.448 92.0 0.00828 25.3 0.865 --161.1 3500 0.546 --52.3 1.394 68.4 0.000298 --87.1 0.944 --163.3 3550 0.518 --56.8 1.073 52.6 0.00543 7.1 0.965 --171.1 3600 0.492 --68.4 0.834 39.8 0.00150 --30.4 0.958 --177.1
md7ic2755nr1 MD7IC2755GNR1 15 rf device data freescale semiconductor package dimensions
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md7ic2755nr1 MD7IC2755GNR1 17 rf device data freescale semiconductor
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md7ic2755nr1 MD7IC2755GNR1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1
md7ic2755nr1 MD7IC2755GNR1 21 rf device data freescale semiconductor product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2009 ? initial release of data sheet 1 july 2009 ? test conditions clarified for fig. 18, pulsed cw output power versus input power @ 28 v @ 2500 mhz, and fig. 19, pulsed cw output power versus input power @ 28 v @ 2700 mhz, p. 12 ? added electromigration mttf calculator availability to product software, p. 21 2 sept. 2010 ? for p out = 10 w cw, changed stage 1a, stage 1b thermal resistance values from 4.0 (stage 1a), 5.0 (stage 1b) to 2.6 c/w and stage 2a, stage 2b thermal resistance values from 0.9 (stage 2a), 2.1 (stage 2b) to 1.8 in thermal characteristics table. for p out = 55 w cw, changed stage 1a, stage 1b thermal resistance values from 4.6 (stage 1a), 4.2 (stage 1b) to 2.3 c/w and stage 2a, stage 2b thermal resistance values from 1.2 (stage 2a), 2.0 ( stage 2b) to 1.1 in thermal characteristics table. thermal value now reflects the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 2. ? fig. 4, test circuit component layout, added labels to d istinguish carrier and peaking side of amplifier, p. 6 3 sept. 2010 ? fig. 3, test circuit schematic, corrected l abeling of c9 and c11 0.5 pf chip capacitors, p. 5
22 rf device data freescale semiconductor md7ic2755nr1 MD7IC2755GNR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: md7ic2755n rev. 3, 9/2010

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